p age:p2-p1 plastic-encapsulate transistors features complementary to mmbt5551 ideal for medium power amplification and switching marking : 2l maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current -continuous i c -0.6 a collector power dissipation p c 0.3 w junction temperature t j 150 storage temperature t stg -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c = -100 a, i e =0 -160 v collector-emitter breakdown voltage v ceo i c = -1ma, i b =0 -150 v emitter-base breakdown voltage v ebo i e = -10 a, i c =0 -5 v collector cut-off current i cb o v cb = -12 0 v , i e =0 -0.1 a emitter cut-off current i eb o v eb =-4v , i c =0 -0.1 a dc current gain h fe1 v ce = -5v, i c = -1ma 80 h fe2 v ce = -5v, i c =-10ma 100 300 h fe3 v ce = -5v, i c =-50ma 50 collector-emitter saturation voltage v ce (sat) i c =-50 ma, i b = -5ma -0.5 v base-emitter saturation voltage v be (sat) i c = -50 ma, i b = - 5ma -1 v transition frequency f t v ce = -5v, i c = -10ma f= 30mhz 100 mhz (pnp) 1. base 2. emitter sot-23 3. collecto MMBT5401 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors g uangdong hottech industrial co,. ltd. typical characteristics MMBT5401 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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